High-Pressure HGF Furnace for InP (Indium Phosphide) Polycrystal Synthesis utilizes a dual-zone vapor transport synthesis process to achieve the direct combination of high-purity red phosphorus and metallic indium within a high-pressure, sealed quartz reaction system. It serves as the critical equipment for preparing electronic-grade InP polycrystalline raw materials. Equipped with precise temperature and pressure control, the system synthesizes high-purity InP polycrystals with an exact stoichiometric ratio, fully meeting the stringent raw material requirements for subsequent single crystal growth.
## Key Technical Features
* Horizontal dual-zone design: Evaluates and controls the phosphorus evaporation temperature in the low-temperature zone, while regulating the synthesis reaction temperature in the high-temperature zone.
* Dual-layer hermetic sealing: Utilizes a high-pressure stainless steel chamber coupled with quartz ampoules, complemented by an integrated oxy-hydrogen flame quartz sealing station.
* Programmable ramp-and-soak control: Enables fully automated synthesis processes to effectively prevent ampoule explosion and raw material oxidation.
* High-purity gas purification system: Delivers an ultra-clean reaction environment with moisture and oxygen levels maintained at $le$ 1 ppm.
* In-situ directional solidification: Supports inline directional solidification upon synthesis completion, enabling the direct preparation of polycrystalline ingots ready for single crystal growth.
## Key Performance Specifications
| Parameter | Technical Specifications |
|---|
| Synthesis Method | Direct Vapor Transport Synthesis |
| Maximum Working Temperature | 1280°C |
| Temperature Control Accuracy | ±0.2°C |
| Maximum Working Pressure | 4.0 MPa |
| Batch Capacity (per run) | 4 - 6 kg |
| Polycrystal Purity | ≥ 99.9999% (6N) |
| Stoichiometric Deviation | In/P ≤ 0.1% |
| Carrier Concentration | n-type ≤ 5 x 10^{15} cm^{-3}(undoped) |
SemiCrystal Limited (SemiCrystal.com)
https://www.semicrystal.com/equipment/high-pressure-hgf-furnace-for-inp-indium-phosphide-polycrystal-synthesis.html